Infineon IGBT Distributor - Full Series, Deep Stock
Infineon Technologies leads the global IGBT market with a portfolio spanning every power class from compact single-package devices to high-current press-pack modules. The H3 and H4 trench-field-stop IGBT families deliver the lowest saturation voltage in their class at both room temperature and 150 degreesC junction temperature, making them the preferred choice for string inverters, UPS systems, and induction-heating generators where efficiency directly impacts system profitability.
For high-voltage industrial converters and traction drives, the IHV and IHW series push breakdown voltages to 1700 V while maintaining competitive switching losses. These IGBTs use Infineon's patented carrier-stored trench-gate bipolar transistor (CSTBT) cell structure, which shortens tail current and reduces turn-off energy dissipation compared to conventional planar IGBT topologies.
In the consumer and motor-drive segment, the IKP and IKW TO-247 package devices balance cost and performance for variable-frequency drives (VFDs), servo amplifiers, and welding inverters. Reverse-blocking RB-IGBT devices enable ac-switch and matrix-converter topologies without antiparallel diodes, simplifying converter architectures and shrinking PCB footprint.
BeiLuo's deep IGBT inventory covers all major package variants - TO-247, TO-263, D2PAK, and HSOF module formats - with genuine Infineon lot traceability. Our field application engineers support customers through device selection, thermal simulation review, gate-drive circuit design, and short-circuit ruggedness testing. Whether you are qualifying a new inverter platform or looking for a pin-compatible upgrade path, BeiLuo provides the technical depth and stock availability to keep your program on schedule.
Available IGBT Models
| Part No. | Series | VCE (V) | IC (A) | Package | Stock | Action |
|---|---|---|---|---|---|---|
| IKW40N120H3 | H3 | 1200 | 40 | TO-247-3 | inStock | Details |
| IKD06N60RF | RapidSwitch | 600 | 6 | TO-252-3 | rfq | Details |
FAE Technical Support
I have specified Infineon IGBTs in solar inverter and EV charging designs for over a decade, and the H3 generation consistently surprises engineers with its turn-off energy at elevated junction temperatures. At 150 degreesC, the IKW40N120H3 shows less than 15 percent increase in Eoff compared to 25 degreesC - a characteristic that allows higher switching frequencies without derating the heatsink. BeiLuo stocks both the discrete devices and co-packed IGBT-diode modules for customers who need to prototype before committing to module formats. We also maintain a gate-drive reference design library for the most common topologies.
Get FAE Consultation