Infineon
IKD06N60RF
RapidSwitch
Package: TO-252-3
600 V 6 A RapidSwitch IGBT in DPAK for LLC converters and class-D amplifiers operating above 150 kHz.
Overview
The Infineon IKD06N60RF is a 600 V, 6 A RapidSwitch(TM) IGBT in the compact TO-252-3 (DPAK) surface-mount package, purpose-engineered for high-frequency resonant topologies such as LLC converters, phase-shifted full-bridge circuits, and class-D audio amplifiers where ultrafast switching transitions and minimal tail current are the dominant selection criteria. The RapidSwitch generation uses an advanced thin-wafer field-stop IGBT process that dramatically reduces minority-carrier lifetime in the N-base, shortening the collector-current tail to less than 50 ns at rated voltage. This results in turn-off energy Eoff below 25 uJ at IC = 6 A and VCE = 400 V - enabling switching frequencies above 150 kHz without thermal runway in low-profile heatsink configurations. The co-packaged soft-recovery diode has a reverse-recovery charge Qrr of only 70 nC, preserving the efficiency benefit of fast IGBT switching in the body-diode commutation path. The TO-252-3 package's large exposed copper pad provides a junction-to-case thermal resistance of 3.5 K/W, compatible with PCB copper-pour cooling strategies that eliminate discrete heatsinks in low-power auxiliary converter stages. Input impedance is normalized for 10-15 V gate drive with a 10 Ohm series resistor, making the IKD06N60RF straightforward to control from standard single-channel gate-driver ICs. BeiLuo stocks the IKD06N60RF for rapid prototype support and offers engineering samples through our FAE-led sample program. Lead time for production quantities is available upon request quotation.
Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage VCE | 600 | V |
| Collector Current IC (25 degreesC) | 6 | A |
| Gate-Emitter Voltage VGE | +/-20 | V |
| VCEsat (IC=6A, TJ=25 degreesC) | 1.55 | V |
| Turn-Off Energy Eoff (25 degreesC) | 25 | uJ |
| Reverse Recovery Charge Qrr | 70 | nC |
| Collector Current Tail Duration | 50 | ns |
| Thermal Resistance RthJC | 3.5 | K/W |
| Maximum Junction Temperature | 175 | degreesC |
| Package | TO-252-3 (DPAK) |
Applications
- LLC Resonant Converters
- Phase-Shifted Full-Bridge SMPS
- Class-D Audio Amplifiers
- High-Frequency Auxiliary Power Supplies
- Lighting Ballasts
Documents & Downloads
- IKD06N60RF Datasheet (0.8 MB)
- RapidSwitch IGBT Application Note (0.9 MB)
Frequently Asked Questions
Why should I choose an IGBT over a MOSFET for LLC converter designs above 100 kHz?
In LLC resonant converters, the switching transitions occur at near-zero voltage or zero current, which dramatically reduces switching losses in both IGBTs and MOSFETs. However, at 600 V, silicon MOSFETs carry a substantially higher on-state resistance RDSon, translating to higher conduction losses during the resonant current peaks. The IKD06N60RF RapidSwitch IGBT achieves lower conduction loss per amp at these voltage levels while its thin-wafer field-stop process minimizes tail current, making it the lower-loss choice for LLC half-bridge stages above 100 kHz.
What gate drive voltage is recommended for the IKD06N60RF?
Infineon specifies a nominal positive gate drive of 15 V and a negative clamp of 0 V or -5 V for the IKD06N60RF. A 10 Ohm series gate resistor is recommended to limit dIC/dt. Using a negative clamp voltage reduces the risk of parasitic turn-on during fast dVCE/dt transitions at the complementary switch. Standard single-channel gate-driver ICs such as the Infineon EiceDRIVER 1ED020I12-F2 are fully compatible.
How does the IKD06N60RF tail current affect dead-time selection in resonant topologies?
The IKD06N60RF RapidSwitch tail current duration is below 50 ns at rated voltage and 25 degreesC junction temperature, making dead-time selection relatively forgiving compared to standard punch-through IGBTs. A dead time of 150 to 300 ns is typically adequate in half-bridge LLC stages operating at 150 to 250 kHz. As junction temperature rises toward 150 degreesC, tail current duration increases approximately 20 percent, so some margin in the dead-time should be maintained to prevent cross-conduction at elevated operating temperatures.
Is the IKD06N60RF available in tape-and-reel format for SMT assembly?
Yes. The IKD06N60RF in TO-252-3 (DPAK) package is available in 2,500-piece tape-and-reel from BeiLuo, suitable for automated surface-mount assembly lines. We can also supply in cut-tape format for lower-volume prototype orders. Please contact our sales team for minimum order quantity details and current lead times, as this part is currently offered on an RFQ basis.
What is the thermal capability of the TO-252-3 package when PCB copper cooling is used?
The IKD06N60RF's TO-252-3 package provides a junction-to-case thermal resistance RthJC of 3.5 K/W. With a 1,000 mm2 copper pour area on a standard FR4 PCB with one-ounce copper, the board thermal resistance RthCA is approximately 25 to 35 K/W at natural convection. At an ambient temperature of 50 degreesC and 1 W total power dissipation, this results in a junction temperature well within the 175 degreesC rating, making heatsink-free operation viable for auxiliary converter stages dissipating under 1 W.
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