Infineon
IKW40N120H3
H3
Package: TO-247-3
1200 V 40 A H3 trench-field-stop IGBT in TO-247-3 with co-packaged soft-recovery diode for solar inverters and UPS.
Overview
The Infineon IKW40N120H3 is a 1200 V, 40 A trench-field-stop IGBT in the industry-standard TO-247-3 package, representing the third-generation H-series platform optimized for hard-switching converter topologies operating in the 10-40 kHz frequency range. The device achieves a maximum saturation voltage VCEsat of 1.7 V at IC = 40 A and TJ = 25 degreesC, while turn-off energy Eoff remains below 800 uJ at rated current - figures that enable photovoltaic string inverters and UPS rectifiers to achieve European efficiency ratings above 97 percent. The co-packaged emitter-controlled freewheeling diode employs a soft-recovery optimization that limits reverse-recovery current overshoot to less than 20 percent of forward current, preventing excessive voltage spikes on the DC bus and reducing EMI filter requirements. The robust short-circuit withstand time of 10 us at rated voltage simplifies protection circuit design for applications where ground faults or motor locked-rotor conditions must be safely cleared. Gate threshold voltage VGEth is tightly specified between 5 V and 6.5 V across the full junction temperature range, ensuring predictable turn-on behavior in parallel-interleaved converter stages where matched switching timings are critical. The TO-247-3 Kelvin-emitter variant is recommended for gate-drive loop inductance minimization, though the standard three-terminal variant supported in this part offers broad supply chain availability. BeiLuo distributes the IKW40N120H3 in tape-and-reel and tray formats with full Infineon lot documentation. Our FAE team provides thermal simulation files and gate-resistor optimization guidance for customer heatsink designs.
Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage VCE | 1200 | V |
| Collector Current IC (25 degreesC) | 40 | A |
| Collector Current IC (100 degreesC) | 40 | A |
| Gate-Emitter Voltage VGE | +/-20 | V |
| VCEsat (IC=40A, TJ=25 degreesC) | 1.70 | V |
| Turn-Off Energy Eoff (25 degreesC) | 800 | uJ |
| Short-Circuit Withstand Time | 10 | us |
| Thermal Resistance RthJC | 0.36 | K/W |
| Maximum Junction Temperature | 175 | degreesC |
| Package | TO-247-3 |
Applications
- Photovoltaic String Inverters
- UPS and Battery Chargers
- Variable-Frequency Motor Drives
- Induction Heating Generators
- Welding Inverters
Documents & Downloads
- IKW40N120H3 Datasheet (1.1 MB)
- Infineon IGBT Selection Guide - BeiLuo Edition (0.9 MB)
Frequently Asked Questions
What switching frequency range is the IKW40N120H3 optimized for?
The IKW40N120H3 H3 generation IGBT is optimized for hard-switching topologies in the 10 to 40 kHz range. Below 10 kHz, conduction losses dominate and a lower VCEsat device such as the H4 generation may offer marginally better efficiency. Above 40 kHz, switching losses accumulate and silicon carbide MOSFETs typically provide a better loss trade-off. The IKW40N120H3 hits its optimal point near 16 to 20 kHz, the typical operating frequency of photovoltaic string inverters.
How should gate resistance be selected for the IKW40N120H3 in a solar inverter application?
Gate resistance controls the dIC/dt slope during turn-on and the dVCE/dt slope during turn-off, balancing switching losses against EMI and voltage overshoot. For a 1200 V bus with a 200 nH total stray inductance, a gate-turn-on resistance of 10 to 22 Ohm and gate-turn-off resistance of 4.7 to 10 Ohm provides a good starting point. BeiLuo's FAE team can model your specific bus inductance and stray layout to refine these values before board assembly.
Is the IKW40N120H3 pin-compatible with the previous H2 generation?
Yes. The IKW40N120H3 is drop-in compatible with H2 generation devices in the same TO-247-3 package. The pin assignment - gate, collector, emitter - is identical, and the gate threshold voltage window overlaps with H2, so existing gate-drive circuits require no modification. Engineers upgrading from H2 to H3 typically observe a five to eight percent reduction in total switching losses at comparable operating conditions, improving inverter efficiency without any board redesign.
What parallel derating should be applied when running IKW40N120H3 devices in a two-parallel configuration?
When paralleling two IKW40N120H3 IGBTs, Infineon recommends applying a current derating factor of approximately 0.85 per device to account for static and dynamic current imbalance driven by VCEsat and threshold voltage spread. Individual Kelvin-emitter connections and matched gate resistors within +/-5 percent tolerance further reduce current sharing asymmetry. BeiLuo can source matched-lot pairs for qualification builds where current sharing is critical.
Does BeiLuo offer IKW40N120H3 samples for engineering evaluation?
BeiLuo offers a sample program for qualified design-win opportunities. Engineers can request up to ten pieces of IKW40N120H3 for initial lab evaluation through our website contact form. Our FAE team will follow up within one business day to confirm the shipment and provide application support resources including a SPICE model and thermal characterization data for heatsink design.
Alternative Parts
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