Infineon MOSFET Distributor - OptiMOS, StrongIRFET, CoolMOS Full Range

Infineon's MOSFET portfolio spans voltages from 20 V to 950 V and on-state resistances from sub-milliohm to several ohms, giving power engineers a single-vendor solution for every stage of a modern power system. The OptiMOS(TM) 5 and OptiMOS(TM) 6 families redefine the figure of merit for low-voltage MOSFETs below 100 V, achieving RDSon x Qg products that cut synchronous-rectifier conduction losses by up to 25 percent versus competing silicon technologies. At medium voltages from 100 V to 600 V, the CoolMOS(TM) series uses Infineon's superjunction cell structure to break the silicon limit. The CoolMOS(TM) CE and CFD2 generations achieve specific RDSon below 50 mOhm-mm2 at 600 V - performance previously only available in gallium nitride - while maintaining robust avalanche and ESD ruggedness suitable for volume production. These devices dominate in PFC boost stages, active-clamp flyback converters, and totem-pole bridgeless PFC topologies. The StrongIRFET(TM) and HEXFET(R) lineages from the legacy IR brand carry over into Infineon's portfolio with proven field reliability in industrial motor drives, battery disconnect switches, and automotive body electronics. The TO-263, D2PAK, and DirectFET(R) packages offer the lowest possible parasitic inductance for high-frequency synchronous buck regulators in dense server and telecom power conversion units. BeiLuo's authorized MOSFET distribution covers the complete Infineon catalog with inventory depth in popular series across standard TO-220, TO-247, D2PAK, and SOT-23 surface-mount packages. Our FAE team provides PCB layout review, gate-drive sizing, and thermal design guidance to maximize the efficiency potential of every Infineon MOSFET design.