Infineon
BSC011N04LS
OptiMOS 5
Package: TDSON-8
40 V 100 A OptiMOS 5 dual MOSFET in TDSON-8 with 1.1 mOhm RDSon for high-efficiency synchronous buck converters.
Overview
The Infineon BSC011N04LS is the flagship device of the OptiMOS(TM) 5 40 V product family, delivering an industry-leading maximum RDSon of 1.1 mOhm at VGS = 10 V in the compact TDSON-8 (3.3 mm x 3.3 mm) surface-mount package. This combination of ultra-low on-state resistance and small package footprint translates directly into the highest efficiency and smallest board area for synchronous DC/DC buck regulators, bidirectional battery management switches, and point-of-load converters in server, telecom, and automotive 12 V bus applications. The OptiMOS 5 cell structure achieves a specific RDSon of 13 mOhm-mm2 at 40 V - approximately 35 percent lower than comparable OptiMOS 3 devices - through a refined trench-gate topology and optimized doping profile that simultaneously improves gate charge characteristics. Total gate charge Qg is only 41 nC, yielding a figure of merit RDSon x Qg of 45 mOhm-nC, enabling high-efficiency operation at switching frequencies up to 1 MHz. The dual MOSFET configuration in the TDSON-8 package places two matched N-channel devices side by side in a single footprint, allowing a complete synchronous buck stage - high-side and low-side switch - to occupy less than 11 mm2 of PCB area. Thermal resistance junction-to-case is 1.2 K/W per MOSFET, and the exposed copper drain pad provides a low-inductance current path that minimizes AC losses in fast-switching synchronous stages. BeiLuo maintains significant stock of the BSC011N04LS with full Infineon traceability and offers SPICE simulation models and PCB layout review for design-in support.
Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage VDS | 40 | V |
| Continuous Drain Current ID (25 degreesC) | 100 | A |
| RDSon Max (VGS=10V) | 1.1 | mOhm |
| Total Gate Charge Qg | 41 | nC |
| Figure of Merit RDSon x Qg | 45 | mOhm-nC |
| Gate Threshold Voltage VGSth | 1.4 - 2.5 | V |
| Thermal Resistance RthJC (each FET) | 1.2 | K/W |
| Maximum Junction Temperature | 175 | degreesC |
| Package | TDSON-8 (Dual N-Ch) | |
| Specific RDSon | 13 | mOhm-mm2 |
Applications
- Synchronous DC/DC Buck Converters
- Server and Telecom Point-of-Load
- Automotive 12 V Battery Switching
- Lithium Battery Protection Circuits
- Motor Drive Low-Side Switches
Documents & Downloads
- BSC011N04LS Datasheet (0.9 MB)
- BeiLuo MOSFET Selection Guide (1.0 MB)
Frequently Asked Questions
What does the dual MOSFET configuration in the TDSON-8 package mean for buck converter design?
The BSC011N04LS TDSON-8 package integrates two independent N-channel MOSFETs sharing a common source pin, allowing a complete synchronous buck converter high-side and low-side switch pair to fit in a single 3.3 x 3.3 mm footprint. This halves the PCB area used by the switching stage compared to two individual packages. The two MOSFETs have matched electrical characteristics and a shared thermal pad, simplifying gate driver layout and thermal management simultaneously.
What switching frequency can the BSC011N04LS support without significant efficiency penalty?
The BSC011N04LS's figure of merit RDSon x Qg of 45 mOhm-nC is one of the lowest available in silicon MOSFETs at 40 V. At a 500 kHz switching frequency with a 12 V input and 5 V output, total switching losses in both the high-side and low-side devices typically account for less than 25 percent of total converter losses, with conduction losses dominating. At 1 MHz, switching losses become comparable to conduction losses. Beyond 1 MHz, wide-bandgap alternatives such as GaN may offer better efficiency trade-offs.
Is the BSC011N04LS compatible with 5 V gate drive voltage from a low-voltage microcontroller?
The BSC011N04LS gate threshold voltage VGSth ranges from 1.4 V to 2.5 V across the operating temperature range. At VGS = 4.5 V, the datasheet specifies a maximum RDSon of 1.6 mOhm - 45 percent higher than at 10 V drive. For direct microcontroller PWM outputs at 3.3 V logic, a dedicated gate driver is strongly recommended to avoid operating in the linear region. BeiLuo's FAE team can recommend appropriate gate driver ICs from Infineon's EiceDRIVER portfolio.
How does the BSC011N04LS perform in battery disconnect switch applications?
In bidirectional battery disconnect applications, both MOSFETs in the TDSON-8 package can be wired with their sources connected back-to-back to block voltage in either polarity when both gates are driven low. The ultralow RDSon of 1.1 mOhm per FET results in only 0.22 mOhm effective conduction resistance for the series stack at 100 A - translating to 2.2 W total conduction loss at full current. This is substantially lower than equivalent fuse or relay solutions and enables real-time current measurement via shunt voltage without a dedicated current-sense resistor.
Does BeiLuo maintain BSC011N04LS in volume for production-scale orders?
BeiLuo consistently maintains a bonded warehouse buffer of over 5,000 units of the BSC011N04LS to support customer production schedules with minimal lead time exposure. For volume orders above 10,000 units per quarter, we offer blanket order pricing with quarterly call-off scheduling. Our stock is sourced exclusively from Infineon's authorized distribution network, and each lot is accompanied by a certificate of conformance and full date-code documentation.
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